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PTF191601E - Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

PTF191601E_8676794.PDF Datasheet


Part No.	PTF191601E PTF191601F
Description	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
File Size	198.47K / 10 Page
Maker	Infineon Technologies A...
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